Hola, estoy pensando ampliar la memoria al PC con idea de estirarlo un tiempo, la placa es una ASUS M4A78LT-M y tengo dos módulos kingston KHX1333C9D3B1/2G con las siguientes características, serían compatibles?
Gracias y saludotes de antemano
KHX1333C9D3B1/2G
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory
module, based on eight 256M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9. This 240-pin DIMM uses gold contact fingers.
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 0.795 W*
UL Rating 94 V - 0
Operating Temperature 0o
C to 85o C
Storage Temperature -55o
C to +100o C
*Power will vary depending on the SDRAM used.
FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component
Y la única memoria que he podido encontrar es esta Kingston KVR13N9S6/2
DDR3-1333 CL9 SDRAM (Synchronous DRAM) 1Rx16, memory
module, based on four 256M x 16-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact
fingers. The electrical and mechanical specifications are as
follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power 1.050 W*
UL Rating 94 V - 0
Operating Temperature 0C to 85C
Storage Temperature -55o C to +100C
